VxIn(2–x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition
نویسندگان
چکیده
منابع مشابه
Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...
متن کاملEffects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition
The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...
متن کاملBand Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using char...
متن کاملPassivation of GaAs surface by atomic-layer-deposited titanium nitride
The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....
متن کاملEnhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition
The ZnO nanoflowers were synthesized by reactive vapor deposition. A secondary nucleation in the stalk/leaves interface was suggested. The photoluminescence revealed that there were many oxygen vacancies in the nanoflowers. To tune the optical properties of ZnO nanoflowers, ZnO thin films with varying thicknesses were coated on the nanoflowers by atomic layer deposition, which can distinctly im...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2016
ISSN: 0897-4756,1520-5002
DOI: 10.1021/acs.chemmater.5b04402